 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| STM8319 S a mHop Microelectronics C orp. Ver 1.0 Dual Enhancement Mode Field Effect Transistor ( N and P Channel ) PRODUCT SUMMARY (N-Channel) VDSS 30V PRODUCT SUMMARY (P-Channel) VDSS -30V ID 7A RDS(ON) (m) Max 25 @ VGS=10V ID -6A RDS(ON) (m) Max 35 @ VGS=-10V 52 @ VGS=-4.5V 30 @ VGS=4.5V D2 D2 5 6 7 8 4 3 2 1 G2 S2 G1 S1 S O-8 1 D1 D1 ABSOLUTE MAXIMUM RATINGS ( T A=25 C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b d a N-Channel 30 20 TA=25C TA=70C 7 5.6 25 17 TA=25C TA=70C 2 1.3 P-Channel -30 20 -6 -4.8 -22 20 Units V V A A A mJ W C Single Pulse Avalanche Energy Maximum Power Dissipation a Operating Junction and Storage Temperature Range -55 to 150 THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a 62.5 C/W Details are subject to change without notice. Oct,29,2007 1 www.samhop.com.tw STM8319 Ver 1.0 N-Channel ELECTRICAL CHARACTERISTICS ( TA=25 C unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units V 1 10 uA uA OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS IGSS Gate-Body Leakage Current VGS=0V , ID=250uA VDS=24V , VGS=0V 30 VGS= 20V , VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance c VDS=VGS , ID=250uA VGS=10V , ID=7A VGS=4.5V , ID=6.4A VDS=5V , ID=7A 1 1.7 19 24 13 3 25 30 V m ohm m ohm S DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) tf Qg Qgs Qgd Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge c VDS=15V,VGS=0V f=1.0MHz 445 120 60 pF pF pF VDD=15V ID=1A VGS=10V RGEN=6 ohm VDS=15V,ID=7A,VGS=10V VDS=15V,ID=7A,VGS=4.5V VDS=15V,ID=7A, VGS=10V 8.5 10.5 17 20 8 4 1.3 1.8 ns ns ns ns nC nC nC nC DRAIN-SOURCE DIODE CHARACTERISTICS IS VSD Maximum Continuous Drain-Source Diode Forward Current Diode Forward Voltage b 1.7 0.78 1.2 A V VGS=0V,IS=1.7A Oct,29,2007 2 www.samhop.com.tw STM8319 Ver 1.0 P-Channel ELECTRICAL CHARACTERISTICS ( TA=25 C unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units V -1 10 uA uA OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS IGSS Gate-Body Leakage Current VGS=0V , ID=-250uA VDS=-24V , VGS=0V -30 VGS= 20V , VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance c VDS=VGS , ID=-250uA VGS=-10V , ID=-6A VGS=-4.5V , ID=-4.9A VDS=-5V , ID=-6A -1.0 -1.6 27 38 8.5 -3.0 35 52 V m ohm m ohm S DYNAMIC CHARACTERISTICS CISS COSS CRSS Input Capacitance Output Capacitance Reverse Transfer Capacitance c VDS=-15V,VGS=0V f=1.0MHz 790 215 120 10 15 67 33 15 7.5 1.4 4 pF pF pF ns ns ns ns nC nC nC nC SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD=-15V ID=-1A VGS=-10V RGEN=6 ohm VDS=-15V,ID=-6A,VGS=-10V VDS=-15V,ID=-6A,VGS=-4.5V VDS=-15V,ID=-6A, VGS=-10V DRAIN-SOURCE DIODE CHARACTERISTICS Maximum Continuous Drain-Source Diode Forward Current IS VSD Diode Forward Voltage b VGS=0V,IS=-1.7A -0.76 -1.7 -1.2 A V Notes _ a.Surface Mounted on FR4 Board,t < 10sec. _ _ b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. d.Starting TJ=25C,VDD = 20V,VGS=10V,L=0.5mH. Oct,29,2007 3 www.samhop.com.tw STM8319 Ver 1.0 N-Channel 40 VGS=10V VGS=5V VGS=4.5V 20 VGS=4V ID, Drain Current(A) ID, Drain Current(A) 32 16 24 VGS=3.5V 16 VGS=3V 12 Tj=125 C 8 -55 C 4 0 25 C 8 0 0 0.5 1 1.5 2 2.5 3 0 0.7 1.4 2.1 2.8 3.5 4.2 VDS, Drain-to-Source Voltage(V) VGS, Gate-to-Source Voltage(V) Figure 1. Output Characteristics 60 50 Figure 2. Transfer Characteristics 2.0 1.8 1.6 1.4 1.2 1.0 0.0 V G S =4.5V ID=6.4A V G S =10V ID=7A RDS(on)(m ) 40 30 20 VGS=10V 10 1 VGS=4.5V 1 RDS(on), On-Resistance Normalized 8 16 24 32 40 0 25 50 75 100 125 150 T j ( C ) ID, Drain Current(A) Tj, Junction Temperature( C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage 1.3 Figure 4. On-Resistance Variation with Drain Current and Temperature BVDSS, Normalized Drain-Source Breakdown Voltage 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ID=250uA Vth, Normalized Gate-Source Threshold Voltage 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 VDS=VGS ID=250uA 100 125 150 Tj, Junction Temperature( C ) Tj, Junction Temperature( C ) Figure 5. Gate Threshold Variation with Temperature 4 Figure 6. Breakdown Voltage Variation with Temperature Oct,29,2007 www.samhop.com.tw STM8319 Ver 1.0 20.0 49 42 Is, Source-drain current(A) ID=7A 10.0 RDS(on)(m ) 35 75 C 28 21 25 C 125 C 75 C 25 C 125 C 14 7 0 2 4 6 8 10 1.0 0.4 0.6 0.8 1.0 1.2 1.4 VGS, Gate-to-Source Voltage(V) VSD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage 900 Figure 8. Body Diode Forward Voltage Variation with Source Current 10 VGS, Gate to Source Voltage(V) 750 C, Capacitance(pF) 8 6 4 2 0 0 VDS=15V ID=7A 600 Ciss 450 300 150 Crss 0 0 5 10 15 20 25 30 Coss 1 2 3 4 5 6 7 8 VDS, Drain-to-Source Voltage(V) Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 100 Tr 250 ID, Drain Current(A) Switching Time(ns) 100 60 10 TD(off ) TD(on) 10 Tf RD S ( ) ON L im it 10 0u 1m s 10 1 V G S =10V S ingle P ulse T c=25 C DC 10 ms 0m s s 1 1 VDS=15V,ID=1A VGS=10V 0.1 60 100 300 600 0.1 6 10 1 10 100 Rg, Gate Resistance() VDS, Drain-Source Voltage(V) Figure 11. switching characteristics Figure 12. Maximum Safe Operating Area Oct,29,2007 5 www.samhop.com.tw STM8319 Ver 1.0 15V V(B R )DS S tp VDS L DR IV E R RG 20V D .U .T IA S tp + - VD D A 0.0 1 IAS Unclamped Inductive Test Circuit Figure 13a. Unclamped Inductive Waveforms Figure 13b. 10 Normalized Transient Thermal Resistance 1 0.5 0.2 0.1 P DM t1 t2 1. 2. 3. 4. R J A (t)=r (t) * R J A R J A=S ee Datas heet T J M-T A = P DM* R J A (t) Duty C ycle, D=t1/t2 0.1 0.05 0.02 0.01 Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve Oct,29,2007 6 www.samhop.com.tw STM8319 Ver 1.0 P-Channel 20 VGS=10V VGS=5V VGS=4.5V 12 VGS=3.5V 8 20 125 C VGS=4V ID, Drain Current(A) ID, Drain Current(A) 16 16 12 25 C 8 -55 C 4 0 4 VGS=3V 0 0 0.5 1 1.5 2 2.5 3 0 0.9 1.8 2.7 3.6 4.5 5.4 VDS, Drain-to-Source Voltage(V) VGS, Gate-to-Source Voltage(V) Figure 1. Output Characteristics 90 75 60 45 30 VGS=-10V 15 1 VGS=-4.5V Figure 2. Transfer Characteristics 2.0 1.8 RDS(on), On-Resistance Normalized RDS(on)(m ) 1.6 1.4 1.2 1.0 0.8 VGS=-10V ID=-6A VGS=-4.5V ID=-4.9A 1 4 8 12 16 20 0 25 50 75 100 125 150 T j ( C ) ID, Drain Current(A) Tj, Junction Temperature( C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage 1.2 Figure 4. On-Resistance Variation with Drain Current and Temperature BVDSS, Normalized Drain-Source Breakdown Voltage 1.3 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 ID=-250uA Vth, Normalized Gate-Source Threshold Voltage 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -50 -25 0 25 50 75 VDS=VGS ID=-250uA 100 125 150 Tj, Junction Temperature( C ) Tj, Junction Temperature( C ) Figure 5. Gate Threshold Variation with Temperature 7 Figure 6. Breakdown Voltage Variation with Temperature Oct,29,2007 www.samhop.com.tw STM8319 Ver 1.0 100 90 20.0 Is, Source-drain current(A) ID =-6A 10.0 RDS(on)(m ) 80 60 125 C 40 20 0 75 C 25 C 125 C 25 C 75 C 1.0 0 2 4 6 8 10 0 0.25 0.5 0.75 1.0 1.25 VGS, Gate-to-Source Voltage(V) VSD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage Figure 8. Body Diode Forward Voltage Variation with Source Current 10 VGS, Gate to Source Voltage(V) 1200 1000 C, Capacitance(pF) 8 6 4 2 0 0 VDS =-15 V ID=-6A 800 600 400 200 Crss 0 0 5 10 Ciss Coss 15 20 25 30 2 4 6 8 10 12 14 16 VDS, Drain-to-Source Voltage(V) Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 100 Tr 250 ID, Drain Current(A) Switching Time(ns) 100 60 10 T D(off) Tf 10 RD S ( ) ON L im it 10 10 s 10 ms 0m s 0u s T D(on) 1m 1 V G S =10V S ingle P ulse T c=25 C DC 1 1 V D S = -15V,I D=-1A V G S = -10 V 0.1 60 100 300 600 0.1 6 10 1 10 100 Rg, Gate Resistance() VDS, Drain-Source Voltage(V) Figure 11. switching characteristics Figure 12. Maximum Safe Operating Area Oct,29,2007 8 www.samhop.com.tw STM8319 Ver 1.0 15V V(B R )DS S tp VDS L DR IV E R RG 20V D .U .T IA S tp + - VD D A 0.0 1 IAS Unclamped Inductive Test Circuit Figure 13a. Unclamped Inductive Waveforms Figure 13b. 10 Normalized Transient Thermal Resistance 1 0.5 0.2 0.1 P DM t1 t2 1. RthJA (t)=r (t) * R th JA 2. R thJA=See Datasheet 3. TJM-TA = PDM* R thJA (t) 4. Duty Cycle, D=t1/t2 0.1 0.05 0.02 0.01 Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve 10 100 1000 Oct,29,2007 9 www.samhop.com.tw STM8319 Ver 1.0 PACKAGE OUTLINE DIMENSIONS SO-8 1 L E D 0.015X45 A e 0.05 TYP. B 0.016 TYP. A1 0.008 TYP. C H MILLIME T E R S S Y MB OLS MIN A A1 D E H L 1.35 0.10 4.80 3.81 5.79 0.41 0 MAX 1.75 0.25 4.98 3.99 6.20 1.27 8 MIN 0.053 0.004 0.189 0.150 0.228 0.016 0 INC HE S MAX 0.069 0.010 0.196 0.157 0.244 0.050 8 Oct,29,2007 10 www.samhop.com.tw STM8319 Ver 1.0 SO-8 Tape and Reel Data SO-8 Carrier Tape P1 D1 P2 A E1 E2 B0 A0 D0 P0 A TERMINAL NUMBER 1 T SECTION A-A K0 FEEDING DIRECTION unit: PACKAGE SOP 8N 150 A0 6.50 0.15 B0 5.25 0.10 K0 2.10 0.10 D0 1.5 (MIN) D1 1.55 0.10 E 12.0 +0.3 - 0.1 E1 1.75 0.10 E2 5.5 0.10 E P0 8.0 0.10 P1 4.0 0.10 P2 2.0 0.10 T 0.30 0.013 SO-8 Reel W1 S G N R H W UNIT: V M TAPE SIZE 12 REEL SIZE 330 M 330 1 N 62 1.5 W 12.4 + 0.2 W1 16.8 - 0.4 H 12.75 + 0.15 K S 2.0 0.15 G R K V Oct,29,2007 11 www.samhop.com.tw |
Price & Availability of STM8319
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |